2D Junction Profiling on Semiconductor Device Reliability Fail

Reliability Prediction Modeling of Semiconductor Light Emitting Device

This paper presents a probabilistic-approach-based reliability prediction model of semiconductor light emitting devices. Using this model with given initial light-emitting performance and degradation behavior otherwise determined by experiment, the reliability function of the devices is obtained, and the results correlate well with experimental results. (Modeling the initial light-emitting perf...

Reliability physics study for semiconductor-polymer device development

We discuss several aspects of the reliability physics of silicon–polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications. q 2003 Elsevier Science Ltd. All rights reserved.

Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates

Non-volatile logic is a promising solution to overcome the leakage power issue in the off-state [1], which has become an important obstacle to scaling of CMOS technology. Magnetic tunnel junction (MTJ)-based logic has a great potential, because of the non-volatility, unlimited endurance, CMOS compatibility, and fast switching speed of the MTJ devices [2]. In our previous work [3], we have shown...

Semiconductor Slow - Light Device

Semiconductor Slow-Light Device

Semiconductor Reliability Quality and Reliability-1